Title :
Single-wavelength operation of 1.53 ¿m GaInAsP/InP buried-heterostructure integrated twin-guide laser with distributed Bragg reflector under direct modulation up to 1 GHz
Author :
Utaka, K. ; Kobayashi, Kaoru ; Koyama, Fumio ; Abe, Y. ; Suematsu, Yasuharu
Author_Institution :
Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
Abstract :
1.53 ¿m GaInAsP/InP buried-heterostructure integrated twin-guide laser with distributed Bragg reflector (BH-DBR-ITG laser) was directly modulated with microwave modulation current superimposed on a DC bias which was fixed at 1.1 times the threshold current, and single-wavelength operation was experimentally confirmed with a modulation frequency up to 1 GHz and a modulation depth of 100%.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser transitions; optical communication equipment; optical modulation; semiconductor junction lasers; BH-DBR-ITG laser; GaInAsP/InP; buried heterostructure; direct modulation; distributed Bragg reflector; integrated twin-guide laser; microwave modulation; modulation depth of 100%; modulation frequency up to 1 GHz; single-wavelength operation; wavelength 1.53 micron;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810258
