Title :
Electron Hall mobility calculations and alloy scattering in Ga0.47In0.53As
Author :
Takeda, Y. ; Littlejohn, M.A. ; Hauser, J.R.
Author_Institution :
North Carolina State University, Electrical Engineering Department, Raleigh, USA
Abstract :
Electron Hall mobilities are calculated by the iterative technique in Ga0.47In0.53As. From the curve fitting to the most recent experimental data over a wide range of temperature, the alloy scattering potential close to the Phillips electronegativity difference is derived. The alloy scattering-limited mobility has a temperature dependence of T¿1/2 and shows no anomalous behaviour.
Keywords :
Hall effect; III-V semiconductors; carrier mobility; gallium arsenide; indium compounds; Ga0.47In0.53As; Phillips electronegativity difference; alloy scattering potential; curve fitting; electron Hall mobility; temperature dependence;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810265
