Title :
Low-frequency noise spectrum of GaAs FETs
Author_Institution :
CNRS, Laboratoire d´Automatique et d´Analyse des Systÿmes, Toulouse, France
Abstract :
In GaAs MESFETs low-frequency noise spectra of various forms are observed. In some cases they are of the form (A/f) {1¿(2/¿) tan¿1 (¿¿0)}. The bias dependence of A and ¿0 is attributed to the variation in channel thickness. Usefulness of low-frequency spectra for MESFET design and application is outlined.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electron device noise; gallium arsenide; semiconductor device models; GaAs MESFETs; bias dependence; low-frequency noise spectra;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810271
