DocumentCode :
971139
Title :
Metal-semiconductor-metal photodetector on p-type In0.53Ga0.47As
Author :
NOVÁK, J. ; MALACKÝ, L.
Author_Institution :
Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Czechoslovakia
Volume :
26
Issue :
11
fYear :
1990
fDate :
5/24/1990 12:00:00 AM
Firstpage :
704
Lastpage :
705
Abstract :
An MSM Schottky barrier photodetector based on p-type In0.53Ga0.47As suitable for detection in the 0.8-1.7 wavelength range is reported. Aluminium metallisation was used. The large area devices exhibited responsivity of about 0.4 A/W at 1.3 mu m and tau on\n\n\t\t
Keywords :
III-V semiconductors; Schottky-barrier diodes; gallium arsenide; indium compounds; infrared detectors; metal-semiconductor-metal structures; photodiodes; 0.8 to 1.7 micron; 300 ps; Al-InGaAs-Al; In 0.53Ga 0.47As; MSM Schottky barrier photodetector; large area devices; p-type; responsivity; semiconductors; wavelength range;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19900459
Filename :
106028
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=971139
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