• DocumentCode
    971139
  • Title

    Metal-semiconductor-metal photodetector on p-type In0.53Ga0.47As

  • Author

    NOVÁK, J. ; MALACKÝ, L.

  • Author_Institution
    Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Czechoslovakia
  • Volume
    26
  • Issue
    11
  • fYear
    1990
  • fDate
    5/24/1990 12:00:00 AM
  • Firstpage
    704
  • Lastpage
    705
  • Abstract
    An MSM Schottky barrier photodetector based on p-type In0.53Ga0.47As suitable for detection in the 0.8-1.7 wavelength range is reported. Aluminium metallisation was used. The large area devices exhibited responsivity of about 0.4 A/W at 1.3 mu m and tau on\n\n\t\t
  • Keywords
    III-V semiconductors; Schottky-barrier diodes; gallium arsenide; indium compounds; infrared detectors; metal-semiconductor-metal structures; photodiodes; 0.8 to 1.7 micron; 300 ps; Al-InGaAs-Al; In 0.53Ga 0.47As; MSM Schottky barrier photodetector; large area devices; p-type; responsivity; semiconductors; wavelength range;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900459
  • Filename
    106028
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=971139