DocumentCode
971160
Title
Pulsed thermal annealing of arsenic-implanted silicon
Author
Scovell, P.D.
Author_Institution
Standard Telecommunication Laboratories Ltd., Harlow, UK
Volume
17
Issue
12
fYear
1981
Firstpage
403
Lastpage
405
Abstract
A pulsed thermal annealing system is described which rapidly heats samples to 700°C and can successfully activate and regrow arsenic-implanted damaged layers. The junctions so formed are shown to be of low resistivity and exhibit very good diode characteristics. Residual damage seen after the anneal does not appear to degrade the junction performance.
Keywords
annealing; arsenic; elemental semiconductors; ion implantation; semiconductor doping; silicon; Si:As; diode characteristics; elemental semiconductors; pulsed thermal annealing;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19810280
Filename
4245751
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