Title :
Pulsed thermal annealing of arsenic-implanted silicon
Author_Institution :
Standard Telecommunication Laboratories Ltd., Harlow, UK
Abstract :
A pulsed thermal annealing system is described which rapidly heats samples to 700°C and can successfully activate and regrow arsenic-implanted damaged layers. The junctions so formed are shown to be of low resistivity and exhibit very good diode characteristics. Residual damage seen after the anneal does not appear to degrade the junction performance.
Keywords :
annealing; arsenic; elemental semiconductors; ion implantation; semiconductor doping; silicon; Si:As; diode characteristics; elemental semiconductors; pulsed thermal annealing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810280
