• DocumentCode
    971238
  • Title

    Contact potential measurement of cleaved mirror surface of 1.3 μm buried heterostructure laser diode by Kelvin probe force microscopy

  • Author

    Mizutani, T. ; Kato, K. ; Yamagata, T. ; Kishimoto, S. ; Yamamoto, N. ; Kondo, Y.

  • Author_Institution
    Dept. of Quantum Eng., Nagoya Univ., Japan
  • Volume
    38
  • Issue
    25
  • fYear
    2002
  • fDate
    12/5/2002 12:00:00 AM
  • Firstpage
    1662
  • Lastpage
    1663
  • Abstract
    Contact potential images of a cleaved mirror surface of a 1.3 μm buried heterostructure laser diode by Kelvin probe force microscopy have been successfully obtained. The embedded current blocking layer and mesa-etched active region were clearly recognised.
  • Keywords
    atomic force microscopy; contact potential; laser mirrors; laser transitions; laser variables measurement; quantum well lasers; semiconductor device measurement; voltage measurement; 1.3 μm buried heterostructure laser diode; 1.3 micron; InGaAsP-InGaAsP; InP; Kelvin probe force microscopy; cleaved mirror surface; contact potential measurement; embedded current blocking layer; mesa-etched active region; p-InP cladding layer; undoped InGaAsP/InGaAsP strained layer multiple quantum well active layer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20021031
  • Filename
    1137449
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=971238