A double-recessed Al/sub 0.24/GaAs/In/sub 0.16/GaAs pseudomorphic HEMT for Ka- and Q-band power applications

Author

Huang, John C. ; Saledas, P. ; Wendler, John ; Platzker, Aryeh ; Boulais, W. ; Shanfield, Stanley ; Hoke, W. ; Lyman, P. ; Aucoin, L. ; Miquelarena, A. ; Bedard, C. ; Atwood, D.

Author_Institution

Raytheon Co., Lexington, MA, USA

Volume

14

Issue

9

fYear

1993

Firstpage

456

Lastpage

458

Abstract

A double-recessed 0.2- mu m-gate-length pseudomorphic HEMT (PHEMT) has been demonstrated with 500 mW of output power (833 mW/mm of gate periphery), 6-dB gain, and 35% power-added efficiency (PAE) at 32 GHz. At 44 GHz, the device exhibited 494 mW of output power (823 mW/mm), 4.3-dB gain, and 30% PAE. This level of performance is attributed to excellent MBE material, optimized epitaxial layer design, and the use of individual source vias and of double recess with tight channel dimensions. Excellent 3-in-wafer uniformity was also observed: DC yield was greater than 95% and the interquartile range for all DC parameters was less than 20% of the median value (most are significantly lower).<>

Keywords

III-V semiconductors; aluminium compounds; electric breakdown of solids; equivalent circuits; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; power transistors; semiconductor epitaxial layers; solid-state microwave devices; 0.2 micron; 30 to 35 percent; 32 to 44 GHz; 4.3 to 6 dB; 494 to 500 mW; Al/sub 0.24/GaAs-In/sub 0.16/GaAs; EHF; Ka-band; MBE material; MM-wave type; PHEMT; Q-band; double recess; high breakdown voltage; millimetre wave operation; optimized epitaxial layer design; power applications; pseudomorphic HEMT; source vias; Delay; Epitaxial layers; Etching; Fabrication; Frequency; Gallium arsenide; Molecular beam epitaxial growth; PHEMTs; Power generation; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.244708

Filename

244708