Hydrogenated amorphous silicon carbide double graded-gap p-i-n thin-film light-emitting diodes

Author

Shin, Nerng-Fu ; Chen, Jyh-Young ; Jen, Tean-Sen ; Hong, Jyh-Wong ; Chang, Chun-Yen

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan

Volume

14

Issue

9

fYear

1993

Firstpage

453

Lastpage

455

Abstract

Hydrogenated amorphous silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diodes (TFLEDs) with graded p/sup +/-i and i-n/sup +/ junctions have been proposed and fabricated successfully on an indium-tin-oxide (ITO)-coated glass. An orange TFLED reveals a brightness of 207 cd/m/sup 2/ at an injection current density of 500 mA/cm/sup 2/. This significant increase of brightness could be ascribed to the combined effect of reduced interface states by using the graded-gap junctions, lower contact resistance due to post-metallization annealing, and higher optical gaps of the doped layers.<>

Keywords

amorphous semiconductors; contact resistance; energy gap; hydrogen; interface electron states; light emitting diodes; p-i-n diodes; semiconductor materials; silicon compounds; thin film devices; ITO coated glass; ITO substrate; InSnO; PIN type; amorphous SiC:H; contact resistance; doped layers; graded-gap junctions; i-n/sup +/ junctions; injection current density; interface states reduction; light-emitting diodes; optical gaps; orange TFLED; p/sup +/-i junction; post-metallization annealing; thin film LED; Amorphous silicon; Annealing; Brightness; Contact resistance; Current density; Glass; Interface states; Light emitting diodes; PIN photodiodes; Semiconductor thin films;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.244709

Filename

244709