Title :
Estimation of signal-to-noise ratio improvement in RF-interconnect
Author :
Shin, H. ; Xu, Z. ; Miyashiro, K. ; Chang, M.F.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fDate :
12/5/2002 12:00:00 AM
Abstract :
RF-interconnect (RFI) can greatly improve the signal-to-noise ratio (SNR) in a high-speed digital interface system by separating the data and the noise in the frequency domain and suppressing the switching noise by the highpass channel characteristics. Experimental characterisation results are presented of a prototype multi-I/O RFI channel. The potential SNR improvement is estimated to be 10 dB compared to conventional digital interface systems. The improved system SNR can lead to enhanced data rate with reduced signalling level in RFI.
Keywords :
CMOS digital integrated circuits; coplanar transmission lines; impedance matching; integrated circuit interconnections; integrated circuit noise; 1 to 40 GHz; RF-interconnect; coplanar waveguide; data noise separation; enhanced data rate; frequency domain; high-speed digital interface system; highpass channel characteristics; impedance-matched transmission line; prototype multi-I/O RF interconnect channel; reduced signalling level; scaled CMOS technology; signal-to-noise ratio improvement estimation; switching noise suppression;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20021167
