Title :
Room-temperature operation of a resonant-tunneling hot-electron transistor based integrated circuit
Author :
Moise, Theodore S. ; Seabaugh, Alan C. ; Beam, Edward A., III ; Randall, John N.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
The first resonant-tunneling hot-electron transistor (RHET) EXCLUSIVE-NOR integrated circuit that operates at room temperature is demonstrated. The XNOR circuit consisting of a single resonant-tunneling transistor and four thin-film resistors, exhibits a 500-mV output voltage swing between the high- and low-logic levels when biased with a 1.8-V supply. The transistor, which features a novel InGaP collector barrier, has a peak current density of 4*10/sup 4/ A-cm/sup -2/, a common-base transfer coefficient of 0.9, and a peak-to-valley current ratio of 10:1 when operated in a common-emitter mode.<>
Keywords :
hot electron transistors; integrated logic circuits; monolithic integrated circuits; resonant tunnelling devices; 1.8 V; EXCLUSIVE-NOR; HET; InGaP collector barrier; XNOR circuit; common-emitter mode; hot-electron transistor; integrated circuit; resonant-tunneling; room temperature; thin-film resistors; Circuits; Contact resistance; Indium phosphide; Leakage current; Potential energy; Resistors; Resonant tunneling devices; Temperature; Thin film transistors; Transmission line measurements;
Journal_Title :
Electron Device Letters, IEEE
