Successive charging/discharging of gate oxides in SOI MOSFET´s by sequential hot-electron stressing of front/back channel

Author

Zaleski, Andrzej ; Ioannou, Dimitris E. ; Campisi, George J. ; Hughes, Harold L.

Author_Institution

Dept. of Electr. Comput. Eng., George Mason Univ., Fairfax, VA, USA

Volume

14

Issue

9

fYear

1993

Firstpage

435

Lastpage

437

Abstract

Hot-hole injection into the opposite channel of silicon-on-insulator (SOI) MOSFETs under hot-electron stress is reported. Sequential front/back-channel hot-electron stressing results in successive hot-electron/-hole injection, causing the threshold voltage to increase and decrease accordingly. This ability to inject hot holes into the opposite gate oxide can be used as an additional tool for studying the degradation mechanisms. Furthermore, it can be explored for possible use in designing SOI flash memory cells with back-channel-based erasing schemes.<>

Keywords

elemental semiconductors; hot carriers; insulated gate field effect transistors; semiconductor storage; semiconductor-insulator boundaries; silicon; MOSFETs; SOI; Si-SiO/sub 2/; back-channel-based erasing schemes; degradation mechanisms; flash memory cell design; front channel; gate oxides; hot hole injection; sequential hot-electron stressing; threshold voltage; Degradation; Electron traps; Electrostatics; Flash memory cells; Hot carriers; MOSFET circuits; Secondary generated hot electron injection; Stress; Threshold voltage; Very large scale integration;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.244715

Filename

244715