Title :
New SSBW mode in GaAs
Author :
Henaff, J. ; Feldmann, Michel ; Carel, M. ; Dubois, Remi
Author_Institution :
CNET Paris-B, Departement MAE, Bagneux, France
Abstract :
A new surface-acoustic-wave mode on GaAs ¿111¿-cut, (110)-direction of propagation is described. This branch is found to be slightly leaky but presents a fair electromechanical coupling coefficient (0.1%) and a rather high velocity (3240 m/s). Excellent agreement between theory and experiment is reported.
Keywords :
III-V semiconductors; gallium arsenide; surface acoustic wave devices; GaAs; III-V semiconductor; SSWB mode; electromechanical coupling coefficient; surface skimming bulk wave mode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810297
