• DocumentCode
    971358
  • Title

    New SSBW mode in GaAs

  • Author

    Henaff, J. ; Feldmann, Michel ; Carel, M. ; Dubois, Remi

  • Author_Institution
    CNET Paris-B, Departement MAE, Bagneux, France
  • Volume
    17
  • Issue
    12
  • fYear
    1981
  • Firstpage
    427
  • Lastpage
    429
  • Abstract
    A new surface-acoustic-wave mode on GaAs ¿111¿-cut, (110)-direction of propagation is described. This branch is found to be slightly leaky but presents a fair electromechanical coupling coefficient (0.1%) and a rather high velocity (3240 m/s). Excellent agreement between theory and experiment is reported.
  • Keywords
    III-V semiconductors; gallium arsenide; surface acoustic wave devices; GaAs; III-V semiconductor; SSWB mode; electromechanical coupling coefficient; surface skimming bulk wave mode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810297
  • Filename
    4245768
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=971358