Title :
Semi-insulating buried heterostructure laser with PN fence
Author :
Pakulski, G. ; Knight, G. ; Das, S.R. ; Jones, T. ; Blaauw, C. ; White, J.K.
Author_Institution :
Nortel Networks Opt. Components, Ottawa, Ont., Canada
fDate :
12/5/2002 12:00:00 AM
Abstract :
The design, fabrication, and performance, of an Fe-doped InP semiinsulating buried heterostructure laser using a PN fence that prevents Zn and Fe interdiffusion is described. The thyristor turn-on in a PN-BH structure is eliminated with this design. Additionally there is minimal parasitic capacitance from the blocking layers. Improved thermal management from the blocking layers allows high temperature operation and the reduced RC time constant make this design suitable for high speed modulation.
Keywords :
III-V semiconductors; capacitance; chemical interdiffusion; indium compounds; iron; optical design techniques; optical fabrication; quantum well lasers; thermal management (packaging); waveguide lasers; Fe interdiffusion; Fe-doped InP semi-insulating buried heterostructure laser; InP:Fe; PN fence; PN-BH structure; Zn interdiffusion; blocking layers; design; fabrication; high speed modulation; high temperature operation; minimal parasitic capacitance; performance; quantum wells; reduced RC time constant; ridge waveguide lasers; thermal management; thyristor turn-on;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20021156
