Title :
1.9 GHz GaAs monolithic filters using Q-enhanced resonators
Author :
McCloskey, E.D. ; Pavio, R. ; Raman, S.
Author_Institution :
AeroAstro, Ashburn, VA, USA
fDate :
12/5/2002 12:00:00 AM
Abstract :
Fully-integrated GaAs Q-enhanced second-order LC bandpass filters are presented. The filters are designed for a 60 MHz, -3 dB bandwidth centred at 1.88 GHz and 0 dB passband insertion loss. Passband gain (up to 15 dB) can be achieved with increased bias current before instability is encountered. These filters have potential application as image-reject filters in GaAs integrated transceiver designs.
Keywords :
Butterworth filters; III-V semiconductors; Q-factor; S-parameters; UHF filters; UHF integrated circuits; band-pass filters; field effect analogue integrated circuits; gallium arsenide; negative resistance circuits; resonator filters; -3 dB bandwidth; 0 dB passband insertion loss; 1.88 GHz; 1.9 GHz; 1.9 GHz GaAs monolithic filters; 15 dB; 60 MHz; GaAs; GaAs integrated transceiver designs; PCS-band applications; Q-enhanced LC second-order Butterworth bandpass filters; Q-enhanced resonators; bias current; image-reject filters; negative resistance circuit; passband gain; second-order LC bandpass filters; small-signal S-parameters;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20021057
