Title :
Very-high-speed back-illuminated InGaAs/InP PIN punch-through photodiodes
Author :
Lee, T.P. ; Burrus, C.A. ; Ogawa, Koichi ; Dentai, A.G.
Author_Institution :
Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Abstract :
Long-wavelength back-illuminated PIN photodiodes capable of detecting optical signals at multigigabit modulation rates have been fabricated and tested in a stripline circuit. A transit-time-limited response time of about 30 ps has been realised in a 25 ¿m-diameter diode.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; photodiodes; III-V semiconductors; back-illuminated InGaAs/InP PIN punch-through photodiodes; multigigabit modulation rates; optical signals; stripline circuit; transit-time-limited response time;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810299
