Title :
GaAs FET distributed amplifier
Author :
Archer, J.A. ; Petz, F.A. ; Weidlich, H.P.
Author_Institution :
Siemens AG, Components Division, DH EH MWT TEE, Mÿnchen, West Germany
Abstract :
The design and construction of a GaAs FET distributed amplifier with a bandwidth of 6 GHz is described The amplifier provides an input VSWR of less than 1.8:1 and noise figure of 3¿6 dB The possibility of bandwidth extension is discussed.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; distributed parameter networks; field effect transistor circuits; gallium arsenide; microwave amplifiers; solid-state microwave circuits; 6 GHz; FET; GaAs; bandwidth extension; construction; design; distributed amplifier; solid state microwave circuit;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810303
