• DocumentCode
    971420
  • Title

    GaAs FET distributed amplifier

  • Author

    Archer, J.A. ; Petz, F.A. ; Weidlich, H.P.

  • Author_Institution
    Siemens AG, Components Division, DH EH MWT TEE, Mÿnchen, West Germany
  • Volume
    17
  • Issue
    13
  • fYear
    1981
  • Firstpage
    433
  • Lastpage
    433
  • Abstract
    The design and construction of a GaAs FET distributed amplifier with a bandwidth of 6 GHz is described The amplifier provides an input VSWR of less than 1.8:1 and noise figure of 3¿6 dB The possibility of bandwidth extension is discussed.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; distributed parameter networks; field effect transistor circuits; gallium arsenide; microwave amplifiers; solid-state microwave circuits; 6 GHz; FET; GaAs; bandwidth extension; construction; design; distributed amplifier; solid state microwave circuit;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810303
  • Filename
    4245775
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=971420