Title :
Observation of velocity overshoot in silicon inversion layers
Author :
Assaderaghi, Fariborz ; Kop, P.K. ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
Employing a test structure, velocity overshoot in silicon inversion layers is observed at room temperature. For channel lengths longer than 0.3 mu m, the velocity/field relation follows the well-known behavior with no channel length dependence. The first indication of velocity overshoot is seen at a channel length of 0.22 mu m, while at L=0.12 mu m, drift velocities up to 35% larger than the long-channel value are measured.<>
Keywords :
carrier mobility; elemental semiconductors; insulated gate field effect transistors; metal-insulator-semiconductor structures; semiconductor-insulator boundaries; silicon; 0.12 to 0.3 micron; SOI structures; Si inversion layers; Si-SiO/sub 2/; channel length dependence; room temperature; test structure; velocity overshoot; velocity/field relation; Electron mobility; Insulation; Length measurement; MOSFETs; Semiconductor films; Silicon; Testing; Threshold voltage; Transconductance; Velocity measurement;
Journal_Title :
Electron Device Letters, IEEE
