DocumentCode
971449
Title
Interferometric measurement of electron-hole pair recombination lifetime as a function of the injection level
Author
Breglio, Giovanni ; Cutolo, Antonello ; Spirito, Paolo ; Zeni, Luigi
Author_Institution
Dept. of Electron. Eng., Naples Univ., Italy
Volume
14
Issue
10
fYear
1993
Firstpage
487
Lastpage
489
Abstract
The authors describe an interferometric technique for the measurement of the recombination lifetime of electron-hole pairs as a function of their concentration, which can be measured with an error smaller than 10%. In addition, the approach is much more sensitive than the other optical methods described in the literature.<>
Keywords
carrier density; carrier lifetime; electron-hole recombination; light interferometry; measurement by laser beam; semiconductors; time measurement; electron-hole pair recombination; injection level; interferometric technique; laser method; measurement; noncontact method; optical methods; recombination lifetime; Geometrical optics; Laser excitation; Optical devices; Optical interferometry; Optical pumping; Optical refraction; Optical sensors; Optical variables control; Pump lasers; Spontaneous emission;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.244739
Filename
244739
Link To Document