Ultra-low-noise cryogenic high-electron-mobility transistors

Author

Duh, K. H George ; Pospieszalski, Marian W. ; Kopp, William F. ; Ho, Pin ; Jabra, Amani A. ; Chao, Pane-Chane ; Smith, Phillip M. ; Lester, Luke F. ; Ballingall, James M. ; Weinreb, S.

Author_Institution

General Electric Co., Syracuse, NY, USA

Volume

35

Issue

3

fYear

1988

fDate

3/1/1988 12:00:00 AM

Firstpage

249

Lastpage

256

Abstract

Quarter-micrometer gate-length high-electron-mobility transistors (HEMTs) for cryogenic low-noise application with very low light sensitivity have been developed. At room temperature, these exhibit a noise figure of 0.4 dB with associated gain of 15 dB at 8 GHz. At a temperature of 12.5 K the minimum noise temperature of 5.3±1.5 K has been measured at 8.5 GHz, which is the best noise performance observed to date for any microwave transistors. The results clearly demonstrate the potential for low-temperature low-noise applications

Keywords

cryogenics; electron device noise; high electron mobility transistors; solid-state microwave devices; 0.25 micron; 0.4 dB; 12.5 K; 15 dB; 300 K; 5.3 K; 8 GHz; 8.5 GHz; cryogenic high-electron-mobility transistors; gain; gate-length; low light sensitivity; low-noise application; microwave transistors; minimum noise temperature; noise figure; Chaos; Circuit noise; Contact resistance; Cryogenics; HEMTs; MESFETs; MODFETs; Noise figure; Noise generators; Temperature sensors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2448

Filename

2448