• DocumentCode
    971542
  • Title

    Capacitance uniformity of silicon hyperabrupt varactors

  • Author

    Gupta, R.P. ; Sharma, M.K. ; Khokle, W.S.

  • Author_Institution
    Central Electronics Engineering Research Institute, Pilani, India
  • Volume
    72
  • Issue
    4
  • fYear
    1984
  • fDate
    4/1/1984 12:00:00 AM
  • Firstpage
    532
  • Lastpage
    533
  • Abstract
    Capacitance uniformity of silicon hyperabrupt varactors for VHF/UHF TV tuner is reported. The devices have been fabricated by a simple composite process in which two conventional techniques CVD and thermal diffusion are coupled to achieve high capacitance uniformity. It is observed that the capacitance matching of these diodes is better or comparable to that of the varactors which have been reported to be fabricated by sophisticated techniques such as ion implantation or epitaxy.
  • Keywords
    Capacitance; Capacitance-voltage characteristics; Computer aided analysis; Diodes; Doping; Impurities; Silicon; Tuners; Varactors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1984.12886
  • Filename
    1457154