Title :
Capacitance uniformity of silicon hyperabrupt varactors
Author :
Gupta, R.P. ; Sharma, M.K. ; Khokle, W.S.
Author_Institution :
Central Electronics Engineering Research Institute, Pilani, India
fDate :
4/1/1984 12:00:00 AM
Abstract :
Capacitance uniformity of silicon hyperabrupt varactors for VHF/UHF TV tuner is reported. The devices have been fabricated by a simple composite process in which two conventional techniques CVD and thermal diffusion are coupled to achieve high capacitance uniformity. It is observed that the capacitance matching of these diodes is better or comparable to that of the varactors which have been reported to be fabricated by sophisticated techniques such as ion implantation or epitaxy.
Keywords :
Capacitance; Capacitance-voltage characteristics; Computer aided analysis; Diodes; Doping; Impurities; Silicon; Tuners; Varactors; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1984.12886