DocumentCode
971542
Title
Capacitance uniformity of silicon hyperabrupt varactors
Author
Gupta, R.P. ; Sharma, M.K. ; Khokle, W.S.
Author_Institution
Central Electronics Engineering Research Institute, Pilani, India
Volume
72
Issue
4
fYear
1984
fDate
4/1/1984 12:00:00 AM
Firstpage
532
Lastpage
533
Abstract
Capacitance uniformity of silicon hyperabrupt varactors for VHF/UHF TV tuner is reported. The devices have been fabricated by a simple composite process in which two conventional techniques CVD and thermal diffusion are coupled to achieve high capacitance uniformity. It is observed that the capacitance matching of these diodes is better or comparable to that of the varactors which have been reported to be fabricated by sophisticated techniques such as ion implantation or epitaxy.
Keywords
Capacitance; Capacitance-voltage characteristics; Computer aided analysis; Diodes; Doping; Impurities; Silicon; Tuners; Varactors; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1984.12886
Filename
1457154
Link To Document