DocumentCode :
971542
Title :
Capacitance uniformity of silicon hyperabrupt varactors
Author :
Gupta, R.P. ; Sharma, M.K. ; Khokle, W.S.
Author_Institution :
Central Electronics Engineering Research Institute, Pilani, India
Volume :
72
Issue :
4
fYear :
1984
fDate :
4/1/1984 12:00:00 AM
Firstpage :
532
Lastpage :
533
Abstract :
Capacitance uniformity of silicon hyperabrupt varactors for VHF/UHF TV tuner is reported. The devices have been fabricated by a simple composite process in which two conventional techniques CVD and thermal diffusion are coupled to achieve high capacitance uniformity. It is observed that the capacitance matching of these diodes is better or comparable to that of the varactors which have been reported to be fabricated by sophisticated techniques such as ion implantation or epitaxy.
Keywords :
Capacitance; Capacitance-voltage characteristics; Computer aided analysis; Diodes; Doping; Impurities; Silicon; Tuners; Varactors; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1984.12886
Filename :
1457154
Link To Document :
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