DocumentCode
971557
Title
Embedded optical interconnections using thin film InGaAs metal-semiconductor-metal photodetectors
Author
Huang, Z. ; Ueno, Y. ; Kaneko, K. ; Jokerst, N.M. ; Tanahashi, S.
Author_Institution
Dept. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume
38
Issue
25
fYear
2002
fDate
12/5/2002 12:00:00 AM
Firstpage
1708
Lastpage
1709
Abstract
The integration of InGaAs photodetectors embedded in a polymer interconnection waveguide on Si and ceramic electrical interconnection substrates has been demonstrated. The photodetector and substrate are independently fabricated and bonded, with subsequent waveguide integration. The embedding fabrication process, coupling, and bandwidth are reported at 1 Gbit/s.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; integrated circuit interconnections; metal-semiconductor-metal structures; optical couplers; optical interconnections; photodetectors; 1 Gbit/s; InGaAs; bandwidth; coupling; electrical interconnection substrates; embedded optical interconnections; fabrication process; interconnect design; metal-semiconductor-metal photodetectors; millihaul interconnections; polymer interconnection waveguide; waveguide integration;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20021047
Filename
1137479
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