A high-performance monolithic Q-band InP-based HEMT low-noise amplifier

Author

Lo, Dennis C W ; Lai, Richard ; Wang, Huifang ; Tan, Kin L. ; Dia, Rosie M. ; Streit, Dwight C. ; Liu, Po-Hsin ; Velebir, James ; Allen, Barry ; Berenz, John

Author_Institution

TRW, Redondo Beach, CA, USA

Volume

3

Issue

9

fYear

1993

Firstpage

299

Lastpage

301

Abstract

The authors report a Q-band two-stage MMIC low-noise amplifier based on 0.1- mu m pseudomorphic InAlAs-InGaAs-InP HEMT technology. The amplifier has achieved an average noise figure of 2.3 dB with associated gain of 25 dB over the band from 43 to 46 GHz. This noise figure is the best result ever reported for a monolithic amplifier at this frequency range. In addition, this InP-based amplifier consumes only 12 mW, which is at least three times lower than a GaAs-based counterpart, indicating that InP-based pseudomorphic HEMTs are well suited for very high density monolithic integration or an application where ultra-low-power consumption is required.<>

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; high electron mobility transistors; indium compounds; microwave amplifiers; 0.1 micron; 12 mW; 2.3 dB; 43 to 46 GHz; HEMT technology; InAlAs-InGaAs-InP; LNA; MMIC; Q-band; low-noise amplifier; monolithic amplifier; monolithic integration; pseudomorphic device; two-stage; ultra-low-power consumption; Circuit noise; Equivalent circuits; Frequency; Gain; HEMTs; Low-noise amplifiers; Millimeter wave integrated circuits; Noise figure; Phased arrays; Space technology;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.244859

Filename

244859