Top-surface-emitting GaAs four-quantum-well lasers emitting at 0.85 mu m

Author

Lee, Y.H. ; Tell, B. ; Brown-Goebeler, K. ; Jewell, J.L. ; Hove, J.V.

Author_Institution

AT&T Bell Labs., Holmdel, NJ, USA

Volume

26

Issue

11

fYear

1990

fDate

5/24/1990 12:00:00 AM

Firstpage

710

Lastpage

711

Abstract

Room temperature CW and pulsed lasing of top-surface emitting, vertical-cavity, GaAs quantum-well lasers was achieved at approximately 845 nm. The active gain medium was four 100 AA thick GaAs quantum wells. The whole structure was grown by molecular beam epitaxy. Deep H⁺-ion implantation followed by annealing as used to control a vertical profile of resistivity for an efficient current injection at the active region. The threshold current was 2.2 mA for CW and pulsed operation using 10 mu m diameter lasers. Differential quantum efficiency was about 20%. Minimum threshold current density per quantum well of 360 A/cm² was obtained.

Keywords

III-V semiconductors; gallium arsenide; semiconductor junction lasers; semiconductor quantum wells; 10 micron; 100 A; 2.2 mA; 845 to 850 nm; CW operation; GaAs; GaAs quantum-well lasers; H⁺ ion implantation; active gain medium; annealing; four-quantum-well lasers emitting; molecular beam epitaxy; pulsed operation; room temperature lasers; semiconductors; threshold current; threshold current density; top surface emitting lasers; vertical-cavity;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19900463

Filename

106032