• DocumentCode
    971658
  • Title

    V-grooved substrate buried heterostructure InGaAsP/InP laser

  • Author

    Ishikawa, Hiroshi ; Imai, H. ; Tanahashi, Toshiyuki ; Nishitani, Y. ; Takusagawa, M. ; Takahei, K.

  • Author_Institution
    Fujitsu Laboratories Ltd., Kawasaki, Japan
  • Volume
    17
  • Issue
    13
  • fYear
    1981
  • Firstpage
    465
  • Lastpage
    467
  • Abstract
    A V-grooved substrate buried-heterostructure laser emitting at 1.3 ¿m wavelength is described. The active layer is buried in the V-shaped groove. A CW threshold current of 10~20 mA is obtained and a far-field pattern free from irregularity and peak shift is realised. Damped relaxation oscillation and stable aging characteristics are obtained.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; substrates; 1.3 microns; InGaAsP-InP laser; V-grooved substrate buried-heterostructure laser; semiconductor junction laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810325
  • Filename
    4245797
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=971658