Title :
V-grooved substrate buried heterostructure InGaAsP/InP laser
Author :
Ishikawa, Hiroshi ; Imai, H. ; Tanahashi, Toshiyuki ; Nishitani, Y. ; Takusagawa, M. ; Takahei, K.
Author_Institution :
Fujitsu Laboratories Ltd., Kawasaki, Japan
Abstract :
A V-grooved substrate buried-heterostructure laser emitting at 1.3 ¿m wavelength is described. The active layer is buried in the V-shaped groove. A CW threshold current of 10~20 mA is obtained and a far-field pattern free from irregularity and peak shift is realised. Damped relaxation oscillation and stable aging characteristics are obtained.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; substrates; 1.3 microns; InGaAsP-InP laser; V-grooved substrate buried-heterostructure laser; semiconductor junction laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810325
