Title :
GaAs read-type impatt diode for 130 GHz CW operation
Author :
Chang, Kuo-Pin ; Kung, J.K. ; Asher, P.G. ; Hayashibara, G.M. ; Ying, R.S.
Author_Institution :
Hughes Aircraft Company, Electron Dynamics Division, Torrance, USA
Abstract :
A Schottky-barrier GaAs read-type impatt diode has been fabricated from the vapour-phase epitaxial material. CW oscillation at 130 GHz with an output of 5 mW and 0.5% efficiency has been achieved.
Keywords :
III-V semiconductors; IMPATT diodes; Schottky-barrier diodes; gallium arsenide; semiconductor technology; vapour phase epitaxial growth; 0.5% efficiency; 130 GHz; 5 mW; GaAs; III-V semiconductors; Schottky barrier read type IMPATT diode; semiconductor technology; vapour-phase epitaxial material;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810329
