Title :
Equivalent circuit of GaAs dual gate MESFETs
Author :
Tsironis, Christos ; Meierer, R.
Author_Institution :
Laboratoires d´Electronique et de Physique Appliquée, Limeil-Brévannes, France
Abstract :
An equivalent circuit for GaAs dual gate MESFETs, valid for 2¿11 GHz, and including 28 elements, has been derived from measured 3-port s-parameters. The bidimensional transfer characteristic of the device made possible separate microwave measurement of each FET part and determination of precise starting values for the optimisation.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; solid-state microwave devices; 2-11 GHz; GaAs; MESFET; bidimensional transfer characteristic; dual gate; equivalent circuit; optimisation; solid state microwave devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810333
