Title :
Enhanced carrier injection efficiency from lateral current injection in multiple-quantum-well DFB lasers
Author :
Champagne, Alain ; Maciejko, Roman ; Makino, Toshihiko
Author_Institution :
Optoelectron. Lab., Ecole Polytech., Montreal, Que., Canada
fDate :
6/1/1996 12:00:00 AM
Abstract :
A bidimensional simulation shows that the lateral carrier injection in etched active region of multiple-quantum-well DFB lasers represents a large fraction of the injected current, leading to improved carrier homogenization in the wells. This increases the average carrier density substantially and provides a much higher gain for the same injected current, depending on detailed device structure.
Keywords :
carrier density; distributed feedback lasers; laser theory; quantum well lasers; semiconductor device models; simulation; average carrier density; bidimensional simulation; detailed device structure; enhanced carrier injection efficiency; etched active region; improved carrier homogenization; injected current; lateral carrier injection; lateral current injection; multiple-quantum-well DFB lasers; quantum well lasers; Bandwidth; Carrier confinement; Charge carrier density; Etching; Gratings; Laser feedback; Laser modes; Poisson equations; Quantum well devices; Quantum well lasers;
Journal_Title :
Photonics Technology Letters, IEEE
