Title :
Monte Carlo comparison of heterojunction cathode Gunn oscillators
Author :
Lee, Chi-Kwan ; Ravaioli, V.
Author_Institution :
Beckman Inst., Illinois Univ., Urbana-Champaign, IL, USA
fDate :
3/29/1990 12:00:00 AM
Abstract :
The authors have performed Monte Carlo simulations to investigate the physics of heterojunction cathode Gunn oscillators. They show that a simple heterojunction cathode does not improve the device performance because the Gunn domain matures too quickly. The inclusion of a thin n+ layer at the heterojunction allows the Gunn domain to grow throughout the length of the device. This yields improved performance as was recently experimentally observed.
Keywords :
Gunn oscillators; Monte Carlo methods; semiconductor device models; Gunn domain maturity; Monte Carlo simulations; device performance; heterojunction cathode Gunn oscillators; thin n + layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900277