Title :
Wide-wavelength polarization-independent optical modulator based on tensile-strained quantum well with mass-dependent width
Author :
Kato, Masaki ; Tada, Kunio ; Nakano, Yoshiaki
Author_Institution :
Dept. of Electron. Eng., Tokyo Univ., Japan
fDate :
6/1/1996 12:00:00 AM
Abstract :
We have fabricated a multiple-quantum-well (MQW) waveguide optical modulator incorporating tensile strain and quantum well with mass-dependent width (QWMDW) for the first time. The structure was built on a strain relief InAlGaAs buffer layer grown on a GaAs substrate. Polarization-independent modulation with more than -10 dB extinction (at 8 V reverse voltage) was achieved over a very wide operating range, from 858 to 886 nm wavelength.
Keywords :
III-V semiconductors; aluminium compounds; deformation; electro-optical modulation; gallium arsenide; indium compounds; light polarisation; molecular beam epitaxial growth; optical fabrication; semiconductor growth; semiconductor quantum wells; 8 V; 858 to 886 nm; GaAs; GaAs substrate; InAlGaAs; dB extinction; mass-dependent width; multiple-quantum-well waveguide optical modulator; polarization-independent modulation; reverse voltage; strain relief InAlGaAs buffer layer; tensile strain; tensile-strained quantum well; very wide operating range; wide-wavelength polarization-independent optical modulator; Buffer layers; Capacitive sensors; Gallium arsenide; Optical buffering; Optical modulation; Optical polarization; Optical waveguides; Quantum well devices; Tensile strain; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
