• DocumentCode
    971995
  • Title

    A tri-stable-state Josephson device memory cell

  • Author

    Chan, Hugo W. ; Van Duzer, Theodore ; Erné, S.N.

  • Author_Institution
    American Microsystem, Inc., Santa Clara, CA
  • Volume
    15
  • Issue
    6
  • fYear
    1979
  • fDate
    11/1/1979 12:00:00 AM
  • Firstpage
    1928
  • Lastpage
    1932
  • Abstract
    Described here is a tri-stable-state memory cell using Josephson junctions as switching elements. In contrast to all previously reported superconducting Josephson memories where information is stored in binary form,the tri-stable-state memory cell stores information in ternary form and at higher density than with the conventional bi-stable memory loops. The principle of operation and design criteria are discussed.
  • Keywords
    Josephson device memories; Clocks; Critical current; Current supplies; Josephson junctions; Laboratories; Power dissipation; Superconducting devices; Switches; Switching circuits; Writing;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1979.1060354
  • Filename
    1060354