DocumentCode
971995
Title
A tri-stable-state Josephson device memory cell
Author
Chan, Hugo W. ; Van Duzer, Theodore ; Erné, S.N.
Author_Institution
American Microsystem, Inc., Santa Clara, CA
Volume
15
Issue
6
fYear
1979
fDate
11/1/1979 12:00:00 AM
Firstpage
1928
Lastpage
1932
Abstract
Described here is a tri-stable-state memory cell using Josephson junctions as switching elements. In contrast to all previously reported superconducting Josephson memories where information is stored in binary form,the tri-stable-state memory cell stores information in ternary form and at higher density than with the conventional bi-stable memory loops. The principle of operation and design criteria are discussed.
Keywords
Josephson device memories; Clocks; Critical current; Current supplies; Josephson junctions; Laboratories; Power dissipation; Superconducting devices; Switches; Switching circuits; Writing;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1979.1060354
Filename
1060354
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