Title :
Simulation of EPROM programming characteristics
Author :
Urai, T. ; Frey, Jesse ; Goldsman, N.
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
fDate :
5/24/1990 12:00:00 AM
Abstract :
An efficient method for the simulation of EPROM programming based on hydrodynamic calculations of electron energy within the device, is described. After the nonMaxwellian energy distribution is calculated, an expression for injected gate current is integrated to find the total gate charge and hence the threshold voltage shift, as a function of time. Comparison of theoretical and experimental results for actual EPROM programming validates this method.
Keywords :
EPROM; PLD programming; digital simulation; electronic engineering computing; semiconductor device models; electron energy; experimental results; hydrodynamic calculations; injected gate current; nonMaxwellian energy distribution; simulation of EPROM programming; threshold voltage shift; total gate charge;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900467
