DocumentCode
972062
Title
Simulation of EPROM programming characteristics
Author
Urai, T. ; Frey, Jesse ; Goldsman, N.
Author_Institution
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Volume
26
Issue
11
fYear
1990
fDate
5/24/1990 12:00:00 AM
Firstpage
716
Lastpage
717
Abstract
An efficient method for the simulation of EPROM programming based on hydrodynamic calculations of electron energy within the device, is described. After the nonMaxwellian energy distribution is calculated, an expression for injected gate current is integrated to find the total gate charge and hence the threshold voltage shift, as a function of time. Comparison of theoretical and experimental results for actual EPROM programming validates this method.
Keywords
EPROM; PLD programming; digital simulation; electronic engineering computing; semiconductor device models; electron energy; experimental results; hydrodynamic calculations; injected gate current; nonMaxwellian energy distribution; simulation of EPROM programming; threshold voltage shift; total gate charge;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900467
Filename
106036
Link To Document