• DocumentCode
    972100
  • Title

    High rate pulse generation from InGaAsP laser in selfoc lens external resonator

  • Author

    Akiba, Shigeyuki ; Williams, G.E. ; Haus, H.A.

  • Author_Institution
    Massachusetts Institute of Technology, Research Laboratory of Electronics, Department of Electrical Engineering & Computer Science, Cambridge, USA
  • Volume
    17
  • Issue
    15
  • fYear
    1981
  • Firstpage
    527
  • Lastpage
    529
  • Abstract
    High rate modulation of an InGaAsP diode laser at rates of 5¿10 GHz was demonstrated using a selfoc microlens external resonator. At a rate of 5.3 GHz modelocked pulses of 30 ps duration were obtained, whereas deeply modulated output was observed at 8.1 and 9.4 GHz rates.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser mode locking; optical modulation; semiconductor junction lasers; 5 to 10 GHz; 5.3 GHz; 8.1 GHz; 9.4 GHz; InGaAsP diode laser; high rate pulse generation; modelocked pulses; modulation; selfoc lens external resonator; semiconductor laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810369
  • Filename
    4245843
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=972100