Improved performance of InAlAs-InGaAs-InP MSM photodetectors with graded superlattice structure grown by gas source MBE

Author

Zhang, Y.G. ; Li, A.Z. ; Chen, J.X.

Author_Institution

Inst. of Metall., Acad. Sinica, Shanghai, China

Volume

8

Issue

6

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

830

Lastpage

832

Abstract

We report on the improved performance of InAlAs-InGaAs-InP metal-semiconductor-metal photodetectors (MSMPDs) with graded superlattice structure grown by gas source molecular beam epitaxy. Low dark current density of 0.75 pA/μm² at 10-V bias, high-breakdown voltage of >40 V at 10 μA and fast transient response of /spl sim/16 ps (t/sub r/, FWHM and t/sub f/) at 5-V bias have been obtained.

Keywords

III-V semiconductors; aluminium compounds; dark conductivity; gallium arsenide; indium compounds; metal-semiconductor-metal structures; molecular beam epitaxial growth; photodetectors; semiconductor growth; semiconductor superlattices; transient response; 10 V; 10 muA; 16 ps; 40 V; 5 V; InAlAs-InGaAs-InP; InAlAs-InGaAs-InP MSM photodetectors; V bias; fast transient response; gas source MBE; gas source molecular beam epitaxy; graded superlattice structure; high-breakdown voltage; low dark current density; metal-semiconductor-metal photodetectors; Detectors; Heterojunctions; Indium compounds; Indium gallium arsenide; Inorganic materials; Metallic superlattices; Molecular beam epitaxial growth; Photodetectors; Substrates; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.502109

Filename

502109