A laser-recrystallization technique for silicon-TFT integrated circuits on quartz substrates and its application to small-size monolithic active-matrix LCD´s

Author

Fujii, Eiji ; Senda, Kohji ; Emoto, Fumiaki ; Yamamoto, Atsuya ; Nakamura, Akira ; Uemoto, Yasuhiro ; Kano, Gota

Author_Institution

Matsushita Electron. Corp., Osaka, Japan

Volume

37

Issue

1

fYear

1990

fDate

1/1/1990 12:00:00 AM

Firstpage

121

Lastpage

127

Abstract

The laser-recrystallization technique utilizes the connected-island structure for forming recrystallized silicon films with enlarged grain size controlled by the thermal gradient. This technique has been used to fabricate the driver circuits of small-size monolithic active-matrix liquid-crystal displays. A horizontal driver circuit with partially recrystallized silicon thin-film transistors (TFTs) has been successfully fabricated on quartz substrates, together with a vertical driver and active-matrix TFT circuits. The operating frequency of the fabricated horizontal driver circuits can be as high as 10 MHz under a clock voltage of 5 V

Keywords

driver circuits; elemental semiconductors; field effect integrated circuits; integrated circuit technology; laser beam annealing; liquid crystal displays; recrystallisation; silicon; thin film transistors; 10 MHz; 5 V; Si-SiO₂; SiO₂; active-matrix TFT circuits; clock voltage; connected-island structure; driver circuits; grain size; laser-recrystallization technique; operating frequency; quartz substrates; recrystallized silicon films; silicon-TFT integrated circuits; small-size monolithic active-matrix liquid-crystal displays; thermal gradient; vertical driver TFT circuits; Active matrix liquid crystal displays; Active matrix technology; Driver circuits; Grain size; Optical control; Semiconductor films; Silicon; Size control; Substrates; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.43808

Filename

43808