Characteristics of Cr Schottky amorphous silicon photodiodes and their application to linear image sensors

Author

Kakinuma, Hiroaki ; Sakamoto, Masaaki ; Kasuya, Yukio ; Sawai, Hideo

Author_Institution

Oki Electr. Ind. Co. Ltd., Tokyo, Japan

Volume

37

Issue

1

fYear

1990

fDate

1/1/1990 12:00:00 AM

Firstpage

128

Lastpage

133

Abstract

Cr Schottky amorphous silicon (a-Si:H) photodiodes with a configuration of Cr/a-Si:H tin-doped indium oxide (ITO), where Cr is negatively biased with respect to ITO in contrast to the conventional bias direction, were characterized to provide simple and stable sensor elements for economical linear image sensors. It was found that the barrier height of the Cr/a-Si:H junction is sufficiently high (0.89 eV) to prevent electron injection and that the junction is thermally stable. The transport properties of holes propagating in the a-Si:H layer were largely improved by a few parts per million boron doping, and as a result saturation of the photocurrent was achieved. A contact-type ISO A4, 8-dot/mm linear range sensor was fabricated using the Cr Schottky photodiode array. The sensor showed excellent characteristics for use in G3 facsimile

Keywords

Schottky-barrier diodes; amorphous semiconductors; chromium; elemental semiconductors; hydrogen; image sensors; photodiodes; silicon; 0.89 eV; Cr Schottky photodiode array; Cr-ITO-Si:H; Cr-InSnO-Si:H; G3 facsimile; Si:H,B; amorphous Si:H photodiodes; contact-type ISO A4; economical linear image sensors; electron injection; hole transport properties; junction barrier height; linear range sensor; negatively biased Cr; photocurrent saturation; stable sensor elements; thermal stability; Amorphous silicon; Boron; Chromium; Doping; Electrons; Image sensors; Indium tin oxide; Photodiodes; Sensor arrays; Sensor phenomena and characterization;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.43809

Filename

43809