Title :
Exponential bidirectional associative memories
Author :
Jeng, Y.-J. ; Yeh, C.C. ; Chiveh, T.D.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
5/24/1990 12:00:00 AM
Abstract :
A bidirectional associative memory (BAM) with an exponential nonlinearity is presented. This method has the advantage of exponential strategy. It improves the performance of the BAM. An energy function that decreases as the memory state changes can be defined, ensuring the stability of the system.
Keywords :
VLSI; content-addressable storage; integrated memory circuits; neural nets; bidirectional associative memory; energy function; exponential bidirectional associative memories; exponential nonlinearity; exponential strategy; stability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900468
