Title :
GaAs pin-photodiodes with an AlGaInP window layer for use in 650-nm wavelength GI-POF data links
Author :
Hayashi, M. ; Tsuji, M. ; Makita, K. ; Nyu, T. ; Yamazaki, S. ; Sugita, K. ; Taguchi, K.
Author_Institution :
Optoelectron. Res. Labs., NEC Corp., Tsukuba, Japan
fDate :
6/1/1996 12:00:00 AM
Abstract :
GaAs pin-photodiodes (PIN-PDs) with a wide bandgap AlGaInP window layer were demonstrated for a graded-index plastic optical fiber (GI-POF) data link at a wavelength of 650 nm as a high-speed and low-bias operation receiver. High quantum efficiency of over 80% was obtained in the wavelength range from 600 to 850 nm. A 3-dB bandwidth of 4.3 GHz was achieved in 90 μm/spl phi/ PIN-PDs. High speed operation up to 600 Mb/s in 210 μm/spl phi/ PIN-PDs was demonstrated under the bias free condition.
Keywords :
data communication; gallium arsenide; gradient index optics; optical communication equipment; optical fibre networks; p-i-n photodiodes; 210 mum; 4.3 GHz; 600 Mbit/s; 600 to 850 nm; 650 nm; 80 percent; 90 mum; AlGaInP; AlGaInP window layer; GaAs; GaAs pin-photodiodes; PIN-PDs; bias free condition; dB bandwidth; graded-index plastic optical fiber; high quantum efficiency; high speed operation; high-speed; low-bias operation receiver; nm wavelength GI-POF data links; wavelength range; wide bandgap AlGaInP window layer; Absorption; Bandwidth; Costs; Diode lasers; Epitaxial growth; Gallium arsenide; Optical fibers; Photodiodes; Photonic band gap; Silicon compounds;
Journal_Title :
Photonics Technology Letters, IEEE
