• DocumentCode
    972176
  • Title

    Low-noise two-dimensional electron gas FET

  • Author

    Laviron, M. ; Delagebeaudeuf, D. ; Delescluse, P. ; Chaplart, J. ; Linh, N.T.

  • Author_Institution
    Thomson-CSF, Central Research Laboratory, Orsay, France
  • Volume
    17
  • Issue
    15
  • fYear
    1981
  • Firstpage
    536
  • Lastpage
    537
  • Abstract
    Two-dimensional electron gas FETs (TEGFETs) have been fabricated on an N-AlGaAs-GaAs heterojunction. Microwave results at 10 GHz are: NF=2.3 dB, Gass=10.3 dB and Gmax=13.2 dB. These first results obtained on nonoptimised material and processing suggest that TEGFET can be superior to a conventional GaAs FET.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; electron device noise; electron gas; gallium arsenide; solid-state microwave devices; 10 GHz; MESFET; TEGFET; microwave properties; n-AlGaAs-GaAs heterojunction; noise figure; two-dimensional electron gas FET;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810375
  • Filename
    4245849
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=972176