DocumentCode :
972325
Title :
A Voltage-Sensitive Switch
Author :
Otley, K.O. ; Shoemaker, R.F. ; Franklin, P.J.
Author_Institution :
Diamond Ordnance Fuze Labs., Washington, D.C.
Volume :
46
Issue :
10
fYear :
1958
Firstpage :
1723
Lastpage :
1730
Abstract :
An investigation of the controlled dielectric breakdown of aluminum oxide films resulted in the development of a voltage-sensitive switch which may replace thyratrons and gas diodes in circuits which require single switching from a resistance in the kilomegohm range to one of the order of 1 ohm or less. Compared with a thyratron, the switch is smaller, less expensive, more resistant to shock, vibration and high-energy radiation, and requires no additional power supply. In a recent batch, all samples tested broke down between 12 and 13 volts dc. Three circuits are presented which show applications of the switch in a time delay, in a series arrangement, and in a biasing network where terminal voltage is greater than the critical breakdown voltage of the switch.
Keywords :
Aluminum oxide; Breakdown voltage; Dielectric breakdown; Diodes; Electric shock; Power supplies; Switches; Switching circuits; Thyratrons; Voltage control;
fLanguage :
English
Journal_Title :
Proceedings of the IRE
Publisher :
ieee
ISSN :
0096-8390
Type :
jour
DOI :
10.1109/JRPROC.1958.286751
Filename :
4065282
Link To Document :
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