Title :
Temperature dependence of the Gunn threshold in GaAs
Author :
Adams, A.R. ; Tatham, H.L.
Author_Institution :
University of Surrey, Physics Department, Guildford, UK
Abstract :
Measurement of the temperature dependence of the threshold for transferred electron instabilities in GaAs gives (1/IP(300))×(dIP/dT=¿2.4±0.2×10¿3 K¿1, independent of carrier concentration The threshold field decreases with decreasing T and depends on carrier concentration. Reasonable agreement is obtained with Monte Carlo calculations based on ¿-L-X ordering.
Keywords :
Gunn effect; III-V semiconductors; Monte Carlo methods; gallium arsenide; GaAs; Gunn threshold; Monte Carlo calculations; carrier concentration; temperature dependence; transferred electron instabilities;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810390
