Title :
1.3 ¿m-wavelength mode controlled GaInAsP/InP etched laser
Author :
Moriki, Kenta ; Iga, Kenichi ; Uchida, M. ; Wakao, K. ; Kunikane, T.
Author_Institution :
Tokyo Institute of Technology, Research Laboratory of Precision Machinery & Electronics, Yokohama, Japan
Abstract :
A mode controlled GaInAsP/InP (¿=1.3 ¿m) etched laser with a lens-like narrow strip waveguide along the <01> direction has been fabricated. The minimum threshold current was 160 mA for 170 ¿m cavity length, and a single longitudinal mode operation has been obtained up to 1.3 times the threshold.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; p-n heterojunctions; semiconductor junction lasers; 1.3 micron wavelength; III-V semiconductors; minimum threshold current; mode controlled GaInAsP/InP etched laser; narrow strip waveguide;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810392
