Title :
Observation of single interface traps in submicron MOSFET´s by charge pumping
Author :
Groeseneken, Guido V. ; de Wolf, Ingrid ; Bellens, Rudi ; Maes, Herman E.
Author_Institution :
IMEC, Leuven, Belgium
fDate :
6/1/1996 12:00:00 AM
Abstract :
The observation of single interface traps in small area MOSFET´s by charge pumping is demonstrated for the first time, The dependence of the single trap charge pumping current on the base level voltage is described, Also the creation of one single interface trap under influence of low level hot carrier injection is demonstrated. A prediction of the charge pumping current behavior as a function of rise and fall time and temperature for the case of individual traps is made. The correlation with RTS-noise experiments is discussed
Keywords :
MOSFET; electron density; hot carriers; interface states; semiconductor device noise; 0.5 mum; CMOS technology; RTS-noise experiments; base level voltage; charge pumping; drain current noise; electron concentration; fall time; low level hot carrier injection; rise time; single interface traps; submicron MOSFET; temperature dependence; Charge pumps; Electron traps; Frequency; Geometry; Hot carrier injection; Ionizing radiation; MOSFET circuits; Temperature; Transistors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
