A novel scaled-down oxygen-implanted polysilicon resistor for future static RAMs

Author

Saito, Ryuichi ; Sawahata, Yasuo ; Momma, Naohiro

Author_Institution

Hitachi Ltd., Ibaraki, Japan

Volume

35

Issue

3

fYear

1988

fDate

3/1/1988 12:00:00 AM

Firstpage

298

Lastpage

301

Abstract

A scaled-down high resistor (1 μm or less in length) for future static RAMs was realized by using slow arsenic diffusion in oxygen-implanted polysilicon, by which arsenic is partially doped to form a polysilicon interconnection layer. The current-voltage characteristics of the oxygen-doped polysilicon resistors were almost linear, and the marked decrease in resistance for higher applied voltage, observed in undoped polysilicon, was not found. The field-effect modulation of the resistance in the oxygen-doped polysilicon was much less than that of an undoped one

Keywords

elemental semiconductors; field effect integrated circuits; integrated circuit technology; integrated memory circuits; ion implantation; random-access storage; resistors; silicon; 1 micron; Si:O; Si:O,As; current-voltage characteristics; field-effect modulation; length; polysilicon interconnection layer; polysilicon resistor; scaled-down high resistor; static RAMs; Cities and towns; Grain boundaries; Impurities; Power dissipation; Random access memory; Read-write memory; Region 3; Resistors; Silicon; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2454

Filename

2454