Title :
A novel scaled-down oxygen-implanted polysilicon resistor for future static RAMs
Author :
Saito, Ryuichi ; Sawahata, Yasuo ; Momma, Naohiro
Author_Institution :
Hitachi Ltd., Ibaraki, Japan
fDate :
3/1/1988 12:00:00 AM
Abstract :
A scaled-down high resistor (1 μm or less in length) for future static RAMs was realized by using slow arsenic diffusion in oxygen-implanted polysilicon, by which arsenic is partially doped to form a polysilicon interconnection layer. The current-voltage characteristics of the oxygen-doped polysilicon resistors were almost linear, and the marked decrease in resistance for higher applied voltage, observed in undoped polysilicon, was not found. The field-effect modulation of the resistance in the oxygen-doped polysilicon was much less than that of an undoped one
Keywords :
elemental semiconductors; field effect integrated circuits; integrated circuit technology; integrated memory circuits; ion implantation; random-access storage; resistors; silicon; 1 micron; Si:O; Si:O,As; current-voltage characteristics; field-effect modulation; length; polysilicon interconnection layer; polysilicon resistor; scaled-down high resistor; static RAMs; Cities and towns; Grain boundaries; Impurities; Power dissipation; Random access memory; Read-write memory; Region 3; Resistors; Silicon; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
