• DocumentCode
    972391
  • Title

    Electron scattering profiles in SOS films measured by temperature-dependent Hall effect

  • Author

    Lee, Jong-Hyun

  • Author_Institution
    ENSERG/Institut National Polytechnique de Grenoble, Laboratoire de Physique des Composants Ã\xa0 Semiconducteurs, ERA-CNRS 659, Grenoble, France
  • Volume
    17
  • Issue
    16
  • fYear
    1981
  • Firstpage
    566
  • Lastpage
    567
  • Abstract
    The electron scattering mechanisms at every depth in heteroepitaxial SOS films have been investigated by measuring the temperature dependence of Hall mobility. It appears that, above the `critical¿ temperature Tc=120 K, lattice scattering prevails only in the proximity of 1/SiO, while ionised impurity scattering becomes dominant near the substrate (2000 ¿ from Si/Al2O3) even at room temperature.
  • Keywords
    Hall effect; carrier mobility; electronic conduction in crystalline semiconductor thin films; elemental semiconductors; semiconductor epitaxial layers; silicon; Si on sapphire; electron scattering mechanisms; heteroepitaxial SOS films; ionised impurity scattering; temperature-dependent Hall effect;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810397
  • Filename
    4245872
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=972391