Title :
Electron scattering profiles in SOS films measured by temperature-dependent Hall effect
Author_Institution :
ENSERG/Institut National Polytechnique de Grenoble, Laboratoire de Physique des Composants Ã\xa0 Semiconducteurs, ERA-CNRS 659, Grenoble, France
Abstract :
The electron scattering mechanisms at every depth in heteroepitaxial SOS films have been investigated by measuring the temperature dependence of Hall mobility. It appears that, above the `critical¿ temperature Tc=120 K, lattice scattering prevails only in the proximity of 1/SiO, while ionised impurity scattering becomes dominant near the substrate (2000 ¿ from Si/Al2O3) even at room temperature.
Keywords :
Hall effect; carrier mobility; electronic conduction in crystalline semiconductor thin films; elemental semiconductors; semiconductor epitaxial layers; silicon; Si on sapphire; electron scattering mechanisms; heteroepitaxial SOS films; ionised impurity scattering; temperature-dependent Hall effect;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810397
