• DocumentCode
    972439
  • Title

    Failure of Matthiessen´s rule in the calculation of carrier mobility and alloy scattering effects in Ga0.47In0.53As

  • Author

    Takeda, Y. ; Pearsall, T.P.

  • Author_Institution
    North Carolina State University, Electrical Engineering Department, Raleigh, USA
  • Volume
    17
  • Issue
    16
  • fYear
    1981
  • Firstpage
    573
  • Lastpage
    574
  • Abstract
    Matthiessen´s rule is shown to be an unacceptable approximation to analyse the scattering mechanisms in semiconductors, especially when deriving the alloy scattering-limited mobility from the experimental data. The anomalous temperature dependence of the `alloy scattering-limited mobility¿ is caused by the failure of Matthiessen´s rule in the presence of competing scattering modes. The electron Hall mobility calculated using the iterative technique explains accurately the experimental data using a single model for the alloy scattering mechanism and the appropriate material parameters.
  • Keywords
    Hall effect; III-V semiconductors; carrier mobility; gallium arsenide; indium compounds; Ga0.47In0.53As; Hall mobility; III-V semiconductors; Matthiessen´s rule; alloy scattering effects; carrier mobility; iterative technique;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810402
  • Filename
    4245877