Title :
Modelling of dual-gate MESFETs with second gate forward biased
Author :
Chao, P.C. ; Ku, W.H.
Author_Institution :
Cornell University, School of Electrical Engineering, Ithaca, USA
Abstract :
Drain characteristics of dual-gate MESFETs with the second gate positively biased have been analysed on the basis of Pucel.s model. A diode in series with a resistor was proposed to model the positively biased gate. The simulated characteristics agree well with the experimental curves.
Keywords :
Schottky gate field effect transistors; semiconductor device models; diode; drain characteristics; dual-gate MESFETs; model; resistor; second gate forward biased; semiconductor device models;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810403
