• DocumentCode
    972524
  • Title

    Nanopower Subthreshold MCML in Submicrometer CMOS Technology

  • Author

    Cannillo, Francesco ; Toumazou, Christofer ; Lande, Tor Sverre

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK
  • Volume
    56
  • Issue
    8
  • fYear
    2009
  • Firstpage
    1598
  • Lastpage
    1611
  • Abstract
    This paper presents subthreshold MOS current-mode logic (MCML) circuits implemented in a commercial 0.25-mum CMOS technology. We propose the adoption of bulk-drain-connected pMOS transistors as loads for subthreshold MCML gates. The b-d connection extends the linear operating range of the load, thus increasing the output logic swing of the subthreshold MCML gate. Theoretical and measured results are presented for an MCML inverter and a ten-stage ring oscillator operating at supply voltages below the threshold-voltage value, with power consumption on the order of nanowatts. At a 300-mV supply, the oscillator works at a frequency of 638 Hz with a total power consumption of 345 pW.
  • Keywords
    CMOS integrated circuits; CMOS logic circuits; MOS current-mode logic circuits; nanopower subthreshold MCML; submicrometer CMOS technology; Bulk–drain (b-d) connection; nanopower digital logic; subthreshold MOS current-mode logic (MCML); subthreshold circuits;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems I: Regular Papers, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-8328
  • Type

    jour

  • DOI
    10.1109/TCSI.2008.2008275
  • Filename
    4663658