DocumentCode
972540
Title
Optimization of fully-implanted NPNs for high-frequency operation
Author
Nanver, L.K. ; Goudena, E.J.G. ; van Zeijl, H.W.
Author_Institution
Inst. for Microelectron. & Submicron Technol., Delft Univ. of Technol., Netherlands
Volume
43
Issue
6
fYear
1996
fDate
6/1/1996 12:00:00 AM
Firstpage
1038
Lastpage
1040
Abstract
With a very straightforward (low-cost) process flow as basis, fully-implanted washed-emitter-base (WEB) NPNs have been optimized for operation in the 10-30 GHz range. Above 20 GHz the best overall performance is achieved by heavy doping of the epi. A low-stress silicon rich nitride layer is proven effective as surface isolation before contact window dip-etch
Keywords
doping profiles; etching; ion implantation; isolation technology; microwave bipolar transistors; 10 to 30 GHz; contact window dip-etch; fully-implanted NPN transistors; heavy epi doping; high-frequency operation; microwave transistors; process flow; surface isolation; washed-emitter-base transistors; Boosting; Boron; Breakdown voltage; CMOS process; Cutoff frequency; Diodes; Doping profiles; Resists; Scalability; Silicon;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.502142
Filename
502142
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