Title :
Low-temperature process to increase the grain size in polysilicon films
Author :
Reif, R. ; Knott, J.E.
Author_Institution :
Massachusetts Institute of Technology, Department of Electrical Engineering & Computer Science, Cambridge, USA
Abstract :
The letter describes a novel process for increasing the grain size in polycrystalline silicon films at temperatures near 500°C. This process, once perfected, could lead to mono-crystalline or large-grain, uniformly oriented polysilicon films on amorphous surfaces.
Keywords :
elemental semiconductors; grain size; semiconductor thin films; silicon; amorphous surfaces; elemental semiconductors; grain size; low-temperature process; poly Si films;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810413
