Title :
Novel oxide planarization for integrated high-speed Si/SiGe heterojunction bipolar transistors
Author_Institution :
Ruhr-Univ., Bochum, Germany
fDate :
6/1/1996 12:00:00 AM
Abstract :
A straightforward oxide planarization for double mesa Si/SiGe heterojunction bipolar transistors (HBTs) is presented. The starting point is a bias-sputtered SiO2 film covering a mesa with an auxiliary layer on top. The following planarization is performed only by wet chemical etching. A planarized multiplexer circuit resulted in bit rates up to 18 Gbit/s
Keywords :
Ge-Si alloys; elemental semiconductors; etching; heterojunction bipolar transistors; semiconductor materials; silicon; 18 Gbit/s; Si-SiGe; auxiliary layer; bias-sputtered film; bit rates; double mesa transistors; heterojunction bipolar transistors; high-speed transistors; multiplexer circuit; oxide planarization; wet chemical etching; Circuits; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Multiplexing; Planarization; Silicon germanium; Sputter etching; Tin; Wet etching;
Journal_Title :
Electron Devices, IEEE Transactions on
